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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM6861JPT CURRENT 3.5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. * Lead free product is acquired. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * P-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 DD D D 5 1 SS S G 4 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM6861JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -60 V V 20 -3.5 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A -15 2500 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM6861JPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -60 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -60 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-10V, ID=-3.5A VGS=-4.5V, ID=-3.1A -1 99 130 7 -3 125 V m 169 S Forward Transconductance VDS = -10V, ID = -3.5A Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -30V, VGS = 0V, f = 1.0 MHz 885 85 80 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-30V, ID=-3.5A VGS=-10V V DD= -30V ID = -1A , VGS = -10 V RGEN= 6 11 2.4 1.6 12 4 38 12 14 nC 25 15 80 25 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -3.5 -1.2 A V Drain-Source Diode Forward Voltage IS = -1.3A , VGS = 0 V (Note 2) |
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